Highly piezoelectric boundary waves in Si/SiO2/LiNbO3 structure

被引：19

作者：

Yamaguchi, M ^{[1
]}

Yamashita, T ^{[1
]}

Hashimoto, K ^{[1
]}

Omori, T ^{[1
]}

机构：

[1] Chiba Univ, Dept Electron & Mech Engrg, Inage Ku, Chiba 2638522, Japan

来源：

PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/FREQ.1998.717942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is theoretically shown that highly piezoelectric boundary waves are propagated in various structures based on the combination of Si/SiO2/LiNbO3, and that the range of existence of these boundary waves is quite large. The non-leaky boundary waves propagating in [001]-Si-< 100 >/SiO2/YX-LiNbO3 structure with SiO2 thickness of 0.8 lambda possess the electromechanical coupling factor of 12% and temperature coefficient of velocity of 15ppm/degrees C, and are found to be applicable to practical devices, In particular, because of very confined energy distribution close to the SiO2/NbO3 boundary, devices employing the structure need Si and LiNbO3 substrates of only a few wavelength thickness. This suggests that devices could be developed by various methods such as wafer bonding and thin him deposition techniques.

引用

页码：484 / 488

页数：5