Superconducting spin valves controlled by spiral re-orientation in B20-family magnets

被引:24
作者
Pugach, N. G. [1 ,2 ]
Safonchik, M. [3 ]
Champel, T. [4 ]
Zhitomirsky, M. E. [5 ]
Lahderanta, E. [6 ]
Eschrig, M. [7 ]
Lacroix, C. [8 ]
机构
[1] Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, Leninskie Gory 1 2, Moscow 119991, Russia
[2] Natl Res Univ, Higher Sch Econ, Moscow 101000, Russia
[3] AF Ioffe Phys Tech Inst, RU-194021 St Petersburg, Russia
[4] Univ Grenoble Alpes, CNRS, LPMMC, F-38000 Grenoble, France
[5] Univ Grenoble Alpes, CEA, INAC Pheliqs, F-38000 Grenoble, France
[6] Lappeenranta Univ Technol, POB 20, FI-53851 Lappeenranta, Finland
[7] Royal Holloway Univ London, Dept Phys, Egham TW20 0EX, Surrey, England
[8] Univ Grenoble Alpes, CNRS, Inst Neel, F-38000 Grenoble, France
关键词
FERROMAGNET; MNSI; SUPERCURRENTS; SPINTRONICS; ORDER;
D O I
10.1063/1.5000315
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few equivalent preferred directions under the control of a weak external magnetic field. Re-orienting the spiral direction allows one to controllably modify long-range spin-triplet superconducting correlations, leading to spin-valve switching behavior. Our results indicate that the spin-valve effect may be noticeable. This bilayer may be used as a magnetic memory element for cryogenic nanoelectronics. It has the following advantages in comparison to superconducting spin valves proposed previously: (i) it contains only one magnetic layer, which may be more easily fabricated and controlled; (ii) its ground states are separated by a potential barrier, which solves the "half-select" problem of the addressed switch of memory elements. Published by AIP Publishing.
引用
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页数:5
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