Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96 x 128 pixels

被引：21

作者：

Alchalabi, K ^{[1
]}

Zimin, D

Zogg, H

Buttler, W

机构：

[1] Swiss Fed Inst Technol, Thin Film Phys Grp, Zurich, Switzerland

[2] Ingenieurburo, D-45276 Essen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 03期

关键词：

heteroepitaxy; infrared focal plane arrays; infrared sensors; lead chalcogenides;

D O I：

10.1109/55.910611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional (2-D) infrared focal plane array in a heteroepitaxial narrow gap semiconductor layer has been realized for the first time on a Si substrate containing the read-out electronics. The infrared-sensitive layer (PbTe for the 3-5 mum wavelength range) is grown by molecular beam epitaxy at temperatures below 450 degreesC, allowing fully processed and tested Si chips to be employed. Individual pixels are obtained by mesa-etching, and photovoltaic sensors are fabricated with standard photolithographic techniques. Within the >97% Operational pixels, high quantum efficiencies and differential resistances at zero bias up to several 100 k Omega at 95K are observed.

引用

页码：110 / 112

页数：3

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