Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga2O3

被引:122
作者
Jiang, Puqing [1 ,2 ]
Qian, Xin [2 ]
Li, Xiaobo [1 ]
Yang, Ronggui [2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Energy & Power Engn, Wuhan 430074, Hubei, Peoples R China
[2] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
基金
美国国家科学基金会;
关键词
TEMPERATURE HEAT-CAPACITIES; GALLIUM OXIDE; IRREVERSIBLE-PROCESSES; RECIPROCAL RELATIONS;
D O I
10.1063/1.5054573
中图分类号
O59 [应用物理学];
学科分类号
摘要
beta-Ga2O3 has attracted considerable interest in recent years for high power electronics, where the thermal properties of beta-Ga2O3 play a critical role. The thermal conductivity of beta-Ga2O3 is expected to be three-dimensionally (3D) anisotropic due to the monoclinic lattice structure. In this work, the 3D anisotropic thermal conductivity tensor of a (010)-oriented beta-Ga2O3 single crystal was measured using a recently developed elliptical-beam time-domain thermoreflectance method. Thermal conductivity along any direction in the (010) plane as well as the one perpendicular to the (010) plane can be directly measured, from which the 3D directional distribution of the thermal conductivity can be derived. Our measured results suggest that at room temperature, the highest inplane thermal conductivity is along a direction between [001] and [102], with a value of 13.3 +/- 1.8W m(-1) K-1, and the lowest in-plane thermal conductivity is close to the [100] direction, with a value of 9.5 +/- 1.8W m(-1) K-1. The through-plane thermal conductivity, which is along the [010] direction, has the highest value of 22.5 +/- 2.5W m(-1) K-1 among all the directions. The temperature-dependent thermal conductivity of beta-Ga2O3 was also measured and compared with a theoretical model calculation to understand the temperature dependence and the role of impurity scattering. Published by AIP Publishing.
引用
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页数:5
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共 36 条
[1]   LOW TEMPERATURE HEAT CAPACITIES OF INORGANIC SOLIDS .11. THE HEAT CAPACITY OF BETA-GALLIUM OXIDE FROM 15 TO 300-DEGREES-K [J].
ADAMS, GB ;
JOHNSTON, HL .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (19) :4788-4789
[2]   A reinvestigation of beta-gallium oxide [J].
Ahman, J ;
Svensson, G ;
Albertsson, J .
ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1996, 52 :1336-1338
[3]   On the bulk β-Ga2O3 single crystals grown by the Czochralski method [J].
Galazka, Zbigniew ;
Irmscher, Klaus ;
Uecker, Reinhard ;
Bertram, Rainer ;
Pietsch, Mike ;
Kwasniewski, Albert ;
Naumann, Martin ;
Schulz, Tobias ;
Schewski, Robert ;
Klimm, Detlef ;
Bickermann, Matthias .
JOURNAL OF CRYSTAL GROWTH, 2014, 404 :184-191
[4]   CRYSTAL STRUCTURE OF BETA-GA2O3 [J].
GELLER, S .
JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (03) :676-684
[5]   Anisotropic thermal conductivity in single crystal β-gallium oxide [J].
Guo, Zhi ;
Verma, Amit ;
Wu, Xufei ;
Sun, Fangyuan ;
Hickman, Austin ;
Masui, Takekazu ;
Kuramata, Akito ;
Higashiwaki, Masataka ;
Jena, Debdeep ;
Luo, Tengfei .
APPLIED PHYSICS LETTERS, 2015, 106 (11)
[6]   Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals [J].
Handwerg, M. ;
Mitdank, R. ;
Galazka, Z. ;
Fischer, S. F. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (02)
[7]   First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases [J].
He, Haiying ;
Orlando, Roberto ;
Blanco, Miguel A. ;
Pandey, Ravindra ;
Amzallag, Emilie ;
Baraille, Isabelle ;
Rerat, Michel .
PHYSICAL REVIEW B, 2006, 74 (19)
[8]   ROLE OF LOW-ENERGY PHONONS IN THERMAL CONDUCTION [J].
HERRING, C .
PHYSICAL REVIEW, 1954, 95 (04) :954-965
[9]   Guest Editorial: The dawn of gallium oxide microelectronics [J].
Higashiwaki, Masataka ;
Jessen, Gregg H. .
APPLIED PHYSICS LETTERS, 2018, 112 (06)
[10]   Recent progress in Ga2O3 power devices [J].
Higashiwaki, Masataka ;
Sasaki, Kohei ;
Murakami, Hisashi ;
Kumagai, Yoshinao ;
Koukitu, Akinori ;
Kuramata, Akito ;
Masui, Takekazu ;
Yamakoshi, Shigenobu .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (03)