Rapid Thickness Identification Methodology For Two-Dimensional MoS2 and In2Se3 Nanosheets Using Optical Microscopy

被引:0
作者
Wu, Darren [1 ]
Li, Qiu [1 ]
Wang, Feifan [1 ]
Li, Tiantian [1 ]
Gu, Tingyi [1 ]
机构
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19176 USA
来源
2020 9TH IEEE INTEGRATED STEM EDUCATION CONFERENCE (ISEC 2020) | 2020年
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中图分类号
G40 [教育学];
学科分类号
040101 ; 120403 ;
摘要
The development of a novel and accurate thickness identification methodology is imperative for the continued study and potential commercialization of two-dimensional (213) materials. Through experimentation, an effective and straightforward methodology has been produced for the thickness identification of MoS2 and In2Se3 nanosheets on 300nm Si/SiO2 under optical microscopy from approximately single to decuple layer numbers. The optical contrast difference values of the atomically-thin nanostructures were collected throughout and arranged into a standard reference index which was correlated to height number in nanometers. Using this method, the thickness of a substance could be simply and accurately determined without the use of complex instrumentation, experimental setup, and calculation, therefore, saving time and financial costs.
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