Evidence for multiple polytypes of semiconducting boron carbide(C2B10) from electronic structure

被引：32

作者：

Lunca-Popa, P

Brand, JI

Balaz, S

Rosa, LG

Boag, NM

Bai, M

Robertson, BW

Dowben, PA

机构：

[1] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA

[2] Univ Nebraska, Coll Engn & Technol, Lincoln, NE 68588 USA

[3] Univ Nebraska, Behlen Lab Phys, Dept Phys & Astron, Lincoln, NE 68588 USA

[4] Univ Salford, Inst Mat Res, Salford M5 4WT, Lancs, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2005年 / 38卷 / 08期

关键词：

D O I：

10.1088/0022-3727/38/8/023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C2B10H12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes Of C2B10 boron carbide and is consistent with electron diffraction results.

引用

页码：1248 / 1252

页数：5

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