Intrinsic stable orbits in open quantum dots

被引：5

作者：

Bird, JP ^{[1
]}

Akis, R

Ferry, DK

Cooper, J

Ishibashi, K

Ochiai, Y

Aoyagi, Y

Sugano, T

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] RIKEN, Nanoelect Mat Lab, Wako, Saitama 35101, Japan

[3] Chiba Univ, Dept Mat Sci, Inage Ku, Chiba 263, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 8A期

关键词：

D O I：

10.1088/0268-1242/13/8A/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conductance of open quantum dot devices is shown to reveal a series of strikingly periodic oscillations as the negative bias applied to their defining gates is varied at zero magnetic field. These surprisingly regular oscillations persist with unaltered characteristics over a wide range of gate voltages, suggesting that the intrinsic transport properties of these devices are dominated by the selective excitation of a small number of stable orbits.

引用

页码：A4 / A6

页数：3

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