Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures

被引：54
作者：
Garlid, E. S. [1 ]
Hu, Q. O. [2 ]
Chan, M. K. [1 ]
Palmstrom, C. J. [2 ,3 ]
Crowell, P. A. [1 ]
机构：
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 15期
基金：
美国国家科学基金会;
关键词：
SEMICONDUCTORS; NANOSTRUCTURES; TRANSPORT;
D O I：
10.1103/PhysRevLett.105.156602
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe-InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.
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页数：4
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