Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si

被引：22

作者：

Atanassova, E ^{[1
]}

Spassov, D ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 05期

关键词：

D O I：

10.1016/S0026-2714(98)00017-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tantalum pentoxide films (13-260 nm) on p-type Si have been prepared by thermal oxidation at 673-873 K of rf sputtered Ta films and have been studied using Al-Ta2O5-Si capacitors. Both dielectric constant and refractive index were found to depend on the thickness of the Ta2O5 layers. Layers with a dielectric constant of 25-32 were obtained. A decreasing trend in the leakage current was found upon increasing oxidation temperature from 673 to 873 K. Leakage current density of (10(-8) to 3 x 10(-7)) A cm(-2) at 1 MV cm(-1) effective field was achieved. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：827 / 832

页数：6

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