Structure and photoelectric properties of Si1-xSnx epilayers

Epitaxial layers of n-type Si1 - x Snx (0 a parts per thousand currency sign x a parts per thousand currency sign 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of pSi-nSi(1 - x) Snx (0 a parts per thousand currency sign x a parts per thousand currency sign 0.04) structures were studied at various temperatures. It is established that Si0.96Sn0.04 films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the pSi-nSi(0.96)Sn(0.04) structure is shifted to longer wavelengths as compared to that of the pSi-nSi structure. The photosensitivity of the pSi-nSi(0.96)Sn(0.04) structure in the impurity absorption range depends on the temperature.