Random telegraph noise modulation by switching bias in floating gate memory devices

被引：0
|
作者：
Fantini, Paolo [1 ]
Calderoni, Alessandro [1 ]
Marinoni, Andrea [1 ]
机构：
[1] STMicroelect, Via Olivetti 2, I-20041 Agrate Brianza, Italy
来源：
NOISE AND FLUCTUATIONS | 2007年 / 922卷
关键词：
non-volatile memory; RTS; low-frequency noise; switching bias conditions;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Aim of the present work is to investigate the Random telegraph Signal (RTS) in a Floating Gate based memory cell (Flash memory) when the device is rapidly and periodically turned "on" and "off". In particular, the low-frequency noise dependence as a function of frequency of the large-signal excitation has been experimentally explored. The results have been discussed in relation with the average time constants of trap.
引用
收藏
页码：119 / +
页数：2
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