The effect of the experimental parameters on the growth of MoS2 flakes

被引:38
作者
Chen, Fei [1 ,2 ,3 ]
Su, Weitao [1 ]
机构
[1] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Zhejiang, Peoples R China
[2] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
[3] South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China
关键词
LARGE-AREA; OPTICAL-PROPERTIES; GRAIN-BOUNDARIES; ATOMIC LAYERS; MONOLAYER; GRAPHENE; EVOLUTION; WSE2;
D O I
10.1039/c8ce00733k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Chemical vapor deposition (CVD) is one of the successful methods to synthesize two-dimensional (2D) graphene-like transition metal dichalcogenides (TMDCs) with different morphologies, large size, and high crystal quality, which are beneficial for fundamental research and applications. However, the controllable growth of a 2D molybdenum sulfide (MoS2) monolayer with larger size and high quality is still the challenging issue. In this study, a triangular MoS2 monolayer with a different size and quality has been synthesized under different experimental conditions, including growth temperature, growth time, and precursor weight, by an atmospheric-pressure CVD method. The detailed morphology, size, layer number and optical properties of the as-grown MoS2 flakes have been examined by optical microscopy, X-ray photoelectron spectroscopy, atomic force microscopy, Raman and photoluminescence spectroscopy. The evolution of size and optical performance of the triangular MoS2 flakes has been systematically investigated in terms of the growth parameters.
引用
收藏
页码:4823 / 4830
页数:8
相关论文
共 47 条
[1]   Conformal invariance and shape-dependent conductance of graphene samples [J].
Abanin, Dmitry A. ;
Levitov, Leonid S. .
PHYSICAL REVIEW B, 2008, 78 (03)
[2]   EFFECT OF SUBSTRATE-TEMPERATURE AND FILM THICKNESS ON THE SURFACE-STRUCTURE OF SOME THIN AMORPHOUS FILMS OF MOO3 STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY (ESCA) [J].
ANWAR, M ;
HOGARTH, CA ;
BULPETT, R .
JOURNAL OF MATERIALS SCIENCE, 1989, 24 (09) :3087-3090
[3]   Stretching and Breaking of Ultrathin MoS2 [J].
Bertolazzi, Simone ;
Brivio, Jacopo ;
Kis, Andras .
ACS NANO, 2011, 5 (12) :9703-9709
[4]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[5]   Lateral MoS2 p-n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics [J].
Choi, Min Sup ;
Qu, Deshun ;
Lee, Daeyeong ;
Liu, Xiaochi ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Yoo, Won Jong .
ACS NANO, 2014, 8 (09) :9332-9340
[6]   ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .1. BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTROSCOPY [J].
COEHOORN, R ;
HAAS, C ;
DIJKSTRA, J ;
FLIPSE, CJF ;
DEGROOT, RA ;
WOLD, A .
PHYSICAL REVIEW B, 1987, 35 (12) :6195-6202
[7]   Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].
Coleman, Jonathan N. ;
Lotya, Mustafa ;
O'Neill, Arlene ;
Bergin, Shane D. ;
King, Paul J. ;
Khan, Umar ;
Young, Karen ;
Gaucher, Alexandre ;
De, Sukanta ;
Smith, Ronan J. ;
Shvets, Igor V. ;
Arora, Sunil K. ;
Stanton, George ;
Kim, Hye-Young ;
Lee, Kangho ;
Kim, Gyu Tae ;
Duesberg, Georg S. ;
Hallam, Toby ;
Boland, John J. ;
Wang, Jing Jing ;
Donegan, John F. ;
Grunlan, Jaime C. ;
Moriarty, Gregory ;
Shmeliov, Aleksey ;
Nicholls, Rebecca J. ;
Perkins, James M. ;
Grieveson, Eleanor M. ;
Theuwissen, Koenraad ;
McComb, David W. ;
Nellist, Peter D. ;
Nicolosi, Valeria .
SCIENCE, 2011, 331 (6017) :568-571
[8]   Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition [J].
Cong, Chunxiao ;
Shang, Jingzhi ;
Wu, Xing ;
Cao, Bingchen ;
Peimyoo, Namphung ;
Qiu, Caiyu ;
Sun, Litao ;
Yu, Ting .
ADVANCED OPTICAL MATERIALS, 2014, 2 (02) :131-136
[9]   MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].
FIVAZ, R ;
MOOSER, E .
PHYSICAL REVIEW, 1967, 163 (03) :743-&
[10]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191