Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

被引:68
作者
Biyikli, Necmi [1 ]
Haider, Ali [2 ,3 ]
机构
[1] Univ Connecticut, Dept Elect & Comp Engn, 371 Fairfield Way,U-4157 Storrs, Storrs, CT 06269 USA
[2] Bilkent Univ, Natl Nanotechnol Res Ctr UNAM, TR-06800 Ankara, Turkey
[3] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
关键词
atomic layer deposition; semiconductor; nanoscale; nanostructured; metal-oxide; IIInitride; self-limiting; ZNO THIN-FILMS; LOW-TEMPERATURE GROWTH; TIO2 NANOTUBE ARRAYS; ELECTROSPUN POLYMERIC NANOFIBERS; TUNGSTEN DISULFIDE NANOSHEETS; SENSITIZED SOLAR-CELLS; ALUMINUM NITRIDE FILMS; GAS-SENSING PROPERTIES; CORE-SHELL NANOFIBERS; SELF-LIMITING GROWTH;
D O I
10.1088/1361-6641/aa7ade
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.
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页数:52
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