Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

被引：10

作者：

Veinger, AI ^{[1
]}

Zabrodskii, AG ^{[1
]}

Tisnek, TV ^{[1
]}

Goloshchapov, SI ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SOLID STATE COMMUNICATIONS | 2005年 / 133卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

semiconductors; electronic transport;

D O I：

10.1016/j.ssc.2004.12.001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The first observation of low-temperature magnetoresistance (MR) of interference nature in the case of a light doping is reported. The MR occurs in n- and p-type Ge samples at a frequency of 10 GHz at temperatures below 30 K in weak magnetic fields on the background of the classical MR effect associated with electrons in different valleys (n-Ge) and with heavy and light holes (p-Ge). (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：455 / 458

页数：4