128x128 and 288x384 InSb array photodetective assemblies for 3÷5 μm spectral range

被引：1

作者：

Akimov, VM ^{[1
]}

Chishko, VF ^{[1
]}

Dirochka, AI ^{[1
]}

Kasatkin, IL ^{[1
]}

Klimanov, YA ^{[1
]}

Kravtchenko, NV ^{[1
]}

Lopukhin, AA ^{[1
]}

Pasekov, VF ^{[1
]}

机构：

[1] RD&P Ctr Orion, State Sci Ctr, Moscow, Russia

来源：

17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 2003年 / 5126卷

关键词：

mid-wavelength infrared; hybrid technology; InSb photodiode; multiplexer; focal plane array (FPA);

D O I：

10.1117/12.517242

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb-p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384 and 128x128-element p+-on-n diodes formed by Be+- implantation. The diodes had a typical zero-bias resistance of 0.5 GOmega. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6-8)10(-13) W/pixel at 2.10(-3) s storage time.

引用

页码：91 / 97

页数：7