Fully Memristive SNNs with Temporal Coding for Fast and Low-power Edge Computing

被引:31
作者
Zhang, Xumeng [1 ,3 ]
Wu, Zuheng [2 ]
Lu, Jikai [2 ,4 ]
Wei, Jinsong [2 ,4 ]
Lu, Jian [2 ,4 ]
Zhu, Jiaxue [2 ]
Qiu, Jie [4 ]
Wang, Rui [2 ]
Lou, Kaihua [2 ]
Wang, Yongzhou [2 ]
Shi, Tuo [2 ,4 ]
Dou, Chunmeng [2 ]
Shang, Dashan [2 ]
Liu, Qi [1 ,3 ]
Liu, Ming [1 ,2 ,3 ]
机构
[1] Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[3] Fudan Univ, Sch Microelect, Shanghai, Peoples R China
[4] Zhejiang Lab, Hangzhou 311122, Peoples R China
来源
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
D O I
10.1109/IEDM13553.2020.9371937
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SNNs with temporal coding (TC), inspired by the human visual system, have a powerful ability to enable fast and low-power neuromorphic computing. Memristive devices show excellent performance on emulating spiking neurons and synapses in hardware. However, the neuron circuits used for implementing a fully memristive TC SNN are absent. In this work, for the first time, we demonstrate a LIF neuron based on a NbOx device to meet the requirements for the hardware implementation of TC SNNs. The neuron fires at most one spike within an inference window, and its spiking latency inverse to the input current intensity. Using such a neuron, we further experimentally demonstrated a fully memristive TC SNN (256 x 5) to recognize the Olivetti face patterns. Attributing to the one-spike scheme, the TC SNN achieves a sparser spiking number (similar to 72 x reductions), faster inference speed (> 1.5 x improvement), lower power (similar to 53 x reductions) than what happens in rate-coding SNNs.
引用
收藏
页数:4
相关论文
共 7 条
[1]  
Jerry M, 2017, VLSI, pT186
[2]  
Kheradpisheh S. R, 2020, IJNS, V30
[3]  
Luo J, 2019, IEDM
[4]   Deep Learning With Spiking Neurons: Opportunities and Challenges [J].
Pfeiffer, Michael ;
Pfeil, Thomas .
FRONTIERS IN NEUROSCIENCE, 2018, 12
[5]  
Wang Z, 2018, NAT ELECTRON, V2
[6]  
Wu M. H, 2019, VLSI, pT34
[7]   Stable high-capacity and high-rate silicon-based lithium battery anodes upon two-dimensional covalent encapsulation [J].
Zhang, Xinghao ;
Wang, Denghui ;
Qiu, Xiongying ;
Ma, Yingjie ;
Kong, Debin ;
Muellen, Klaus ;
Li, Xianglong ;
Zhi, Linjie .
NATURE COMMUNICATIONS, 2020, 11 (01)