Plastic hardening in cubic semiconductors by nanoscratching

被引：4

作者：

Caldas, P. G. ^{[1
]}

Prioli, R. ^{[1
]}

Almeida, C. M. ^{[2
]}

Huang, J. Y. ^{[3
]}

Ponce, F. A. ^{[3
]}

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453900 Rio De Janeiro, Brazil

[2] Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Rio De Janeiro, Brazil

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 01期

关键词：

SCRATCH HARDNESS; DEFORMATION; INDENTATION; INP; LOAD;

D O I：

10.1063/1.3517459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along < 110 > and < 100 > crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than similar to 80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3517459]

引用

页数：5

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