Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

被引：32

作者：

Kamarudin, M. Ahmad ^{[1
,2
]}

Hayne, M. ^{[1
]}

Young, R. J. ^{[1
]}

Zhuang, Q. D. ^{[1
]}

Ben, T. ^{[3
,4
]}

Molina, S. I. ^{[3
,4
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ Putra Malaysia, Dept Phys, Fac Sci, Upm Serdang 43400, Selangor Darul, Malaysia

[3] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat, Cadiz 11510, Spain

[4] Univ Cadiz, Fac Ciencias, IMyQI, Cadiz 11510, Spain

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTRON; STATES; DOTS;

D O I：

10.1103/PhysRevB.83.115311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanostructures are predominantly ringlike. Moreover, an in situ anneal process applied after thinly capping the dots is shown to enhance the severity of the rings and relax the strain in the matrix in the proximity of the GaSb, resulting in a change to the spatial configuration of the exciton complexes and their optical properties.

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页数：6

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