Improved-performance, InGaAs/InGaAsP (λ=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping

被引：5

作者：

Lee, JJ ^{[1
]}

Mawst, LJ ^{[1
]}

Botez, D ^{[1
]}

机构：

[1] Univ Wisconsin, Reed Ctr Photon, Madison, WI 53706 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 17期

关键词：

D O I：

10.1049/el:20030830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Doping the waveguide core (p = 2 x 10(17) cm(-1)) in asymmetric-waveguide InGa-As/InGaAsP, two-quantum-well diode lasers (lambda = 980 nm) raises the injection efficiency to 90% and decreases the threshold-current density J(th). For 2 mm long, 100 mum wide stripe, uncoated chips J(th) decreases from similar to188 A/cm(2) to similar to150 A/cm(2). High characteristic temperatures for J(th) and the slope efficiency are obtained: T-0 = 215K and T-1 = 600K.

引用

收藏

页码：1250 / 1252

页数：3

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