RETRACTED: The Effect of 600 keV Ag Ion Irradiation on the Structural, Optical, and Photovoltaic Properties of MAPbBr3 Films for Perovksite Solar Cell Applications (Retracted Article)

被引:40
作者
Hussain, Saddam [1 ]
Alwadai, Norah [2 ]
Khan, Muhammad, I [1 ]
Irfan, Muhammad [1 ]
Ikram-ul-Haq [1 ]
Albalawi, Hind [2 ]
Almuqrin, Aljawhara H. [2 ]
Almoneef, Maha M. [2 ]
Iqbal, Munawar [3 ]
机构
[1] Univ Lahore, Dept Phys, Lahore 53700, Pakistan
[2] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Dept Phys, POB 84428, Riyadh 11671, Saudi Arabia
[3] Univ Lahore, Dept Chem, Lahore 53700, Pakistan
关键词
ion implantation; Ag; perovskite solar cells; MAPbBr(3); THIN-FILMS; PEROVSKITE NANOCRYSTALS; ZNO; PHASE; EFFICIENCY; TRANSPARENT; CH3NH3PBBR3; FABRICATION; DEPOSITION; MICROMETER;
D O I
10.3390/ma15155299
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A competitive new technology, organic metallic halide perovskite solar cells feature a wide working area, low manufacturing costs, a long lifespan, and a significant amount of large efficacy of power conversion (PCE). The spin-coating technique was utilized for the fabrication of pure CH3NH3PbBr3 (MAPbBr(3)) thin films, and these films are implanted with 600 keV silver (Ag) ions at fluency rate of 6 x 10(14) and 4 x 10(14) ions/cm(2). XRD analysis confirmed the cubic structure of MAPbBr(3). A high grain size was observed at the fluency rate of 4 x 10(14) ions/cm(2). The UV-Vis spectroscopic technique was used to calculate the optical properties such as the bandgap energy (E-g), refractive index (n), extinction coefficients (k), and dielectric constant. A direct E-g of 2.44 eV was measured for the pristine film sample, whereas 2.32 and 2.36 eV were measured for Ag ion-implanted films with a 4 x 10(14) and 6 x 10(14) ions/cm(2) fluence rate, respectively. The solar cells of these films were fabricated. The J(sc) was 6.69 mA/cm(2), FF was 0.80, V-oc was 1.1 V, and the efficiency was 5.87% for the pristine MAPbBr(3)-based cell. All of these parameters were improved by Ag ion implantation. The maximum values were observed at a fluency rate of 4 x 10(14) ions/cm(2), where the V-oc was 1.13 V, FF was 0.75, J(sc) was 8.18 mA/cm(2), and the efficiency was 7.01%.
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页数:15
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