GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

被引：17

作者：

Parvais, B. ^{[1
,2
]}

Alian, A. ^{[1
]}

Peralagu, U. ^{[1
]}

Rodriguez, R. ^{[1
]}

Yadav, S. ^{[1
]}

Khaled, A. ^{[1
]}

ElKashlan, R. Y. ^{[1
,2
]}

Putcha, V ^{[1
]}

Sibaja-Hernandez, A. ^{[1
]}

Zhao, M. ^{[1
]}

Wambacq, P. ^{[1
,2
]}

Collaert, N. ^{[1
]}

Waldron, N. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Vrije Univ Brussel, Dept ETR, Brussels, Belgium

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

D O I：

10.1109/IEDM13553.2020.9372056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si < 111 > wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak g(m) of 430 mS/mm and an f(MAX) of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1 mu m thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.

引用

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