Rapid thermal annealing study on the metal containing amorphous carbon films

被引:10
作者
Zhang, P [1 ]
Tay, BK [1 ]
Lau, SP [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
amorphous carbon films; microstructure; annealing;
D O I
10.1016/S0925-9635(03)00292-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The tetrahedral amorphous carbon (ta-C) films deposited by filtered cathodic vacuum arc (FCVA) technique contain very high sp(3) fraction. However, the high compressive stress of the ta-C films causes film delamination and limits its potential applications. Stress reduction by incorporating a small percentage of a metallic element such as Al has been reported. In this work, we investigate the rapid thermal annealing (RTA) of Al containing amorphous carbon (a-C:Al) films. The results are compared with that of ta-C films. The microstructure and surface morphology of the films subjected to different annealing temperature were studied by Raman spectrometer and atomic force microscope (AFM), respectively. Some mechanisms were suggested to explain the stress reduction of the films that were subjected to different annealing temperatures. Complete stress relief was observed when the a-C:Al (5 at.%) films were RTA at 800 degreesC for duration of 2 min. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:2093 / 2098
页数:6
相关论文
共 16 条
  • [1] BULL SJ, 1988, SURF COAT TECH, V26, P743
  • [2] Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon
    Conway, NMJ
    Ilie, A
    Robertson, J
    Milne, WI
    Tagliaferro, A
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (17) : 2456 - 2458
  • [3] Interpretation of Raman spectra of disordered and amorphous carbon
    Ferrari, AC
    Robertson, J
    [J]. PHYSICAL REVIEW B, 2000, 61 (20) : 14095 - 14107
  • [4] Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon
    Ferrari, AC
    Kleinsorge, B
    Morrison, NA
    Hart, A
    Stolojan, V
    Robertson, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) : 7191 - 7197
  • [5] Friedman T.A., 2000, US Patent, Patent No. [6,103, 305, 6103305]
  • [6] GROWTH MECHANISMS OF DLC FILMS FROM C+ IONS - EXPERIMENTAL STUDIES
    LIFSHITZ, Y
    LEMPERT, GD
    GROSSMAN, E
    AVIGAL, I
    UZANSAGUY, C
    KALISH, R
    KULIK, J
    MARTON, D
    RABALAIS, JW
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 318 - 323
  • [7] MECHANICAL-PROPERTIES AND STRUCTURE OF DIAMOND-LIKE CARBON
    ROBERTSON, J
    [J]. DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) : 397 - 406
  • [8] Structural properties of amorphous silicon-carbon films deposited by the filtered cathodic vacuum arc technique
    Shi, JR
    Shi, X
    Sun, Z
    Liu, E
    Yang, HS
    Cheah, LK
    Jin, XZ
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (26) : 5111 - 5118
  • [9] Transport of vacuum arc plasma through an off-plane double bend filtering duct
    Shi, X
    Tay, BK
    Tan, HS
    Liu, E
    Shi, J
    Cheah, LK
    Jin, X
    [J]. THIN SOLID FILMS, 1999, 345 (01) : 1 - 6
  • [10] SHI X, 1995, Patent No. 9600389