Low-Dark-Current TiO2 MSM UV Photodetectors With Pt Schottky Contacts

被引：36

作者：

Huang, Huolin ^{[1
]}

Xie, Yannan ^{[1
]}

Yang, Weifeng ^{[2
]}

Zhang, Feng ^{[3
]}

Cai, Jiafa ^{[1
]}

Wu, Zhengyun ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

[3] Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期

关键词：

Dark current; gain; photodetectors (PDs); TiO2; OPTICAL-PROPERTIES; LARGE-AREA; FILMS;

D O I：

10.1109/LED.2011.2104354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and characterization of very low-dark-current TiO2 metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) with Pt Schottky contacts. The dark current of the PDs is merely 1.28 pA at a 5-V bias, which is much better than the previously reported data. The photoconductive gain is less than one for a bias of less than 10 V. The remarkable reduction of the dark current and the gain can be attributed to the combined effect of the large Schottky barrier height produced at the Pt/TiO2 contacts and the high quality of the sputtered TiO2 films, such as low intrinsic carrier concentration, large grain size, and absence of oxygen vacancies. The PDs also display a high quantum efficiency and a large UV-to-visible rejection ratio of about three orders of magnitude.

引用

页码：530 / 532

页数：3

共 12 条

[1] Evaluation of Schottky contact parameters in metal-semiconductor-metal photodiode structures [J].

Averine, S ;

Chan, YC ;

Lam, YL .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :274-276

[2] Electrical characterization of the semiconducting properties of n-TiO2 [J].

Ben Farah, M ;

Lapicque, F ;

Matlosz, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) :3550-3556

[3] Microstructure and optical properties of TiO2 thin films prepared by low pressure hot target reactive magnetron sputtering [J].

Domaradzki, J. ;

Kaczmarek, D. ;

Prociow, E. L. ;

Borkowska, A. ;

Schmeisser, D. ;

Beuckert, G. .

THIN SOLID FILMS, 2006, 513 (1-2) :269-274

[4] Highly efficient ultraviolet photodetectors based on TiO2 nanocrystal-polymer composites via wet processing [J].

Han, Yangang ;

Wu, Gang ;

Li, Haiguo ;

Wang, Mang ;

Chen, Hongzheng .

NANOTECHNOLOGY, 2010, 21 (18)

[5] Deposition of TiO2 thin films using RF magnetron sputtering method and study of their surface characteristics [J].

Heo, CH ;

Lee, SB ;

Boo, JH .

THIN SOLID FILMS, 2005, 475 (1-2) :183-188

[6] Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on TiO2 Films Deposited by Radio-Frequency Magnetron Sputtering [J].

Huang, Huolin ;

Yang, Weifeng ;

Xie, Yannan ;

Chen, Xiaping ;

Wu, Zhengyun .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (06) :588-590

[7] Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes [J].

Kong, Xiangzi ;

Liu, Caixia ;

Dong, Wei ;

Zhang, Xindong ;

Tao, Chen ;

Shen, Liang ;

Zhou, Jingran ;

Fei, Yongfeng ;

Ruan, Shengping .

APPLIED PHYSICS LETTERS, 2009, 94 (12)

[8] Effect of cobalt doping on the structural and optical properties of TiO2 films prepared by sol-gel process [J].

Subramanian, M. ;

Vijayalakshmi, S. ;

Venkataraj, S. ;

Jayavel, R. .

THIN SOLID FILMS, 2008, 516 (12) :3776-3782

[9] Electrochemical fabrication of large-area Au/TiO2 junctions [J].

Tang, J ;

White, M ;

Stucky, GD ;

McFarland, EW .

ELECTROCHEMISTRY COMMUNICATIONS, 2003, 5 (06) :497-501

[10] Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy [J].

Wang, S ;

Li, T ;

Reifsnider, JM ;

Yang, B ;

Collins, C ;

Holmes, AL ;

Campbell, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (11) :1262-1266

← 1 2 →