Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

被引：24

作者：

Kim, SJ ^{[1
]}

机构：

[1] Itswell Co Ltd, Photon Devices Res Lab, Chungbuk 363911, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 08期

关键词：

GaN; III-V light-emitting diode (LED); indium-tin-oxide (ITO); metal-organic chemical vapor deposition;

D O I：

10.1109/LPT.2005.851982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by means of a selective chemical wet-etching technique. The SEVENS-LED formed on sapphire substrate exhibits excellent device performance compared to a conventional NiAu lateral-electrode (LE) GaN-based LED formed on the same sapphire substrate. The integral light-output power of SEVENS-LED is similar to 7 mW, which is 1.75 times stronger than that of the conventional NiAu LE-LED (similar to 4 mW). The external quantum efficiency of SEVENS-LED is estimated to be approximately 13%.

引用

页码：1617 / 1619

页数：3

共 6 条

[1] INDIUM TIN OXIDE AS TRANSPARENT ELECTRODE MATERIAL FOR ZNSE-BASED BLUE QUANTUM-WELL LIGHT EMITTERS [J].

HAGEROTT, M ;

JEON, H ;

NURMIKKO, AV ;

XIE, W ;

GRILLO, DC ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2825-2827

[2]

Kim SJ, 2003, J KOREAN PHYS SOC, V42, P276

[3] Improved light-output power of GaN LEDs by selective region activation [J].

Liu, CC ;

Chen, YH ;

Houng, MP ;

Wang, YH ;

Su, YK ;

Chen, WB ;

Chen, SM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (06) :1444-1446

[4] High output power 365 nm ultraviolet light emitting diode of GaN-free structure [J].

Morita, D ;

Sano, M ;

Yamamoto, M ;

Murayama, T ;

Nagahama, S ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (12B) :L1434-L1436

[5] Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice [J].

Sheu, JK ;

Chi, GC ;

Jou, MJ .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (04) :160-162

[6] Damage-free separation of GaN thin films from sapphire substrates [J].

Wong, WS ;

Sands, T ;

Cheung, NW .

APPLIED PHYSICS LETTERS, 1998, 72 (05) :599-601

← 1 →