Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

被引：24

作者：

Kim, SJ ^{[1
]}

机构：

[1] Itswell Co Ltd, Photon Devices Res Lab, Chungbuk 363911, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 08期

关键词：

GaN; III-V light-emitting diode (LED); indium-tin-oxide (ITO); metal-organic chemical vapor deposition;

D O I：

10.1109/LPT.2005.851982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by means of a selective chemical wet-etching technique. The SEVENS-LED formed on sapphire substrate exhibits excellent device performance compared to a conventional NiAu lateral-electrode (LE) GaN-based LED formed on the same sapphire substrate. The integral light-output power of SEVENS-LED is similar to 7 mW, which is 1.75 times stronger than that of the conventional NiAu LE-LED (similar to 4 mW). The external quantum efficiency of SEVENS-LED is estimated to be approximately 13%.

引用

页码：1617 / 1619

页数：3

共 6 条

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