Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity

被引：36

作者：

Peng, Qiang ^{[1
]}

Jie, Jiansheng ^{[1
]}

Xie, Chao ^{[1
]}

Wang, Li ^{[1
]}

Zhang, Xiwei ^{[1
]}

Wu, Di ^{[1
]}

Yu, Yongqiang ^{[1
]}

机构：

[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期

基金：

中国国家自然科学基金;

关键词：

OPTICAL-PROPERTIES; IMPURITIES;

D O I：

10.1063/1.3569590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnS nanoribbons (NRs) with controlled p-type doping were synthesized by using Sb as dopant. The p-type conductivity of the ZnS: Sb NRs could be tuned in a wide range of seven orders of magnitude by adjusting the Sb doping level. Nano-Schottky barrier diodes based on Al/p-ZnS NRs junctions exhibited excellent device performances with a high rectification ratio > 10(7) and a small ideality factor of similar to 1.22. The diodes also showed the potential as high-sensitive UV detectors. The p-ZnS NRs are expected to act as key building blocks in nano-optoelectronics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569590]

引用

页数：3

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