Observations on-HRTEM features of thermosonic flip chip bonding interface

被引:11
作者
Li, Junhui [1 ]
Han, Lei [1 ]
Zhong, Jue [1 ]
机构
[1] Cent S Univ, Sch Mech & Elect Engn, Changsha 410083, Peoples R China
基金
中国国家自然科学基金;
关键词
thermosome flip chip; atom diffusion; dislocations;
D O I
10.1016/j.matchemphys.2007.06.034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bonding interface features in thermosonic flip chip (FC) bonding are of interest to researchers in microelectronics packaging. In this study, a die with Al pads and eight gold bumps was bonded to a silver-coated pad on our lab test bench. The interface of the sample was analysed by using a high-resolution transmission electron microscope (HRTEM). For FC bonding parameters (e.g. ultrasonic power 2 W, bonding time 350 ms, heating temperature 150 degrees C, and bonding force 3.2 N), the thickness of atom diffusion at the Au-Ag interface is about 200 nm and that at the Au-Al interface is about 500 nm. In addition, ultrasonic vibration of FC bonding leads to the growth of the dislocation density in bonded materials and the formation of a cluster of dislocations at the interface. Therefore, short circuit diffusion plays a major rule during ultrasonic bonding when the temperature rise is relatively low. These observations will be helpful for further analysis. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:457 / 460
页数:4
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