Passivated, Highly Reflecting, Laser Contacted Ge Rear Side for III-V Multi-Junction Solar Cells

被引：5

作者：

Weiss, Charlotte ^{[1
]}

Schon, Jonas ^{[1
]}

Hohn, Oliver ^{[1
]}

Fuhrmann, Bianca ^{[2
]}

Dimroth, Frank ^{[1
]}

Janz, Stefan

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

[2] Azur Space Solar Power GmbH, D-74072 Heilbronn, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2021年 / 11卷 / 05期

基金：

欧盟地平线“2020”;

关键词：

Germanium; Standards; Passivation; Photonics; Power lasers; Mirrors; Voltage measurement; III-V multijunction solar cells; germanium; laser contacts; surface passivation;

D O I：

10.1109/JPHOTOV.2021.3087727

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This article describes the successful integration of a passivated, highly reflecting Ge rear side into a III-V multijunction solar cell. The use of lowly doped Ge and the new rear side leads to the aimed increase in Ge cell current up to 1.6 mA.cm(-2), demonstrated by external quantum efficiency and I-V measurements. For the contact formation, two different types of laser processes were conducted and evaluated-the laser fired contact route and the PassDop route. In both cases, the formation of a local back surface field preserves the passivation of the contact points. A laser pitch and laser power variation leads to a good performing back contact. The passivation effect is proven experimentally and is qualitatively accessed with cell simulations.

引用

页码：1256 / 1263

页数：8

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