Monolayer SnX (X = O, S, Se): Two-Dimensional Materials with Low Lattice Thermal Conductivities and High Thermoelectric Figures of Merit

被引:26
作者
Fang, Wenyu [1 ,2 ]
Wei, Haoran [1 ,2 ]
Xiao, Xinglin [1 ,2 ]
Chen, Yue [1 ,2 ]
Li, Mingkai [1 ,2 ]
He, Yunbin [1 ,2 ]
机构
[1] Hubei Univ, Hubei Key Lab Ferro & Piezoelect Mat & Devices, Key Lab Green Preparat & Applicat Funct Mat, Minist Educ,Hubei Key Lab Polymer Mat, Wuhan 430062, Peoples R China
[2] Hubei Univ, Sch Mat Sci & Engn, Wuhan 430062, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
monolayer SnX (X = O; S; Se); thermal conductivity; thermoelectric properties; power factor; ZT value; PERFORMANCE; STABILITY; SPECTRUM; BULK;
D O I
10.1021/acsaem.2c01284
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thermoelectric materials have attracted great attention due to their important applications in power generation, energy saving, and electric refrigeration. In this article, we designed three two-dimensional materials SnX (X = O, S, Se), which exhibit high stability. All three monolayers are direct band gap semiconductors with a " multivalley" characteristic in band structures, showing bandgaps of 2.87, 1.83, and 1.27 eV for SnO, SnS, and SnSe, respectively. In addition, the SnX monolayers with the optimum power factor values can be up to 0.91-0.97 W m(-1) K-2 at room temperature. The small group velocities and strong anharmonic phonon behavior led to an intrinsic lattice thermal conductivity as low as similar to 0.92-2.27 W m(-1) K-1. As results, SnX exhibit excellent thermoelectric properties, with the figure of merit (ZT) up to similar to 0.07-0.52, similar to 0.13-0.89, and similar to 0.25-1.41 for SnO, SnS, and SnSe at temperatures of 300-700 K, respectively.
引用
收藏
页码:7802 / 7812
页数:11
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