Mechanisms of doping graphene

被引：54

作者：

Pinto, H. ^{[1
]}

Jones, R. ^{[1
]}

Goss, J. P. ^{[2
]}

Briddon, P. R. ^{[2
]}

机构：

[1] Univ Exeter, Sch Engn Math & Phys Sci, Exeter EX4 4QL, Devon, England

[2] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 09期

关键词：

doping; electrochemical; graphene; SURFACE CONDUCTIVITY; OXIDATION; DIAMOND;

D O I：

10.1002/pssa.201000009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecules like tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and electropositive metals like K dope graphene p- and n-type, respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel doping mechanism is exhibited by Au which dopes bilayer graphene but not single layer. Thirdly, electrochemical doping is effected by redox reactions and can result in p-doping by humid atmospheres and n-doping by NH3 and toluene. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2131 / 2136

页数：6

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