Local strain effects in near-field spectra of single semiconductor quantum dots.

被引：0

作者：

Mintairov, AM ^{[1
]}

Blagnov, PA ^{[1
]}

Kovalenkov, OV ^{[1
]}

Li, C ^{[1
]}

Merz, JL ^{[1
]}

Oktyabrsky, S ^{[1
]}

Sun, K ^{[1
]}

Tokranov, V ^{[1
]}

Vlasov, AS ^{[1
]}

Kinokurov, DA ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES | 2003年 / 737卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. "Pressure" coefficients of 0.65-3.5 meV/nm have been measured for ground state emission lines in agreement with numerical calculations. We show that the observed increase of the tip-induced energy shift with increasing aperture diameter is caused by a decrease of the uniaxial strain component. We also report the effect of emission instability of single QD emission intensity under tip-induced pressure.

引用

页码：59 / 64

页数：6