Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots

被引：20

作者：

He, Jun ^{[1
]}

Bao, Feng ^{[2
]}

Zhang, Jinping ^{[2
]}

机构：

[1] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期

关键词：

LOCALIZATION;

D O I：

10.1063/1.4707385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We systematically study the influence of group V intermixing on the structural and optical properties of type II GaSb/GaAs quantum dots (QDs) capped by selected capping layers. Compared to GaSb QDs capped directly by a GaAs layer, we observe a strong enhancement of photoluminescence (PL) intensity and a significant red-shift of the photoluminescence peak energy to 1.35 mu m at 300K by the introduction of a GaAsSb capping layer. In addition, Z-contrast cross sectional transmission electron microscopy shows Sb segregation and group V mixing is greatly suppressed by GaAsSb or InGaAsSb capping layers. The new capping layers offers the possibility of controlling optical properties of type II GaSb/GaAs quantum dots and this opens up new means for achieving high efficient GaSb/GaAs quantum dot solar cell. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4707385]

引用

页数：4

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