Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors

被引：46

作者：

Chabak, K. D. ^{[1
]}

Walker, D. E., Jr. ^{[1
]}

Green, A. J. ^{[2
]}

Crespo, A. ^{[1
]}

Lindquist, M. ^{[2
]}

Leedy, K. ^{[1
]}

Tetlak, S. ^{[1
]}

Gilbert, R. ^{[2
]}

Moser, N. A. ^{[1
]}

Jessen, G. ^{[1
]}

机构：

[1] Air Force Res Lab, Wright Patterson AFB, OH 45433 USA

[2] KBRwyle, Dayton, OH 45431 USA

来源：

2018 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2018年

关键词：

Gallium Oxide; Radio Frequency; MOSFET; T-gate; gate-recess; BETA-GA2O3;

D O I：

10.1109/IMWS-AMP.2018.8457153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Beta-gallium oxide (BGO) radio frequency device performance is presented using sub-micron T-shaped gates. In the first design, a gate-recess is implemented to allow gate and channel device scaling which results in f(t)/f(max) = 3/13 GHz at V-DS = 40 V. The second approach uses a thin and higher doped channel with a T-gate formed by electron beam lithography. An f(t)/f(max) = 5/17 GHz is measured at V-DS = 15 V and is the highest reported for BGO transistors. Significant gains in RF performance are expected with reduction of device parasitics and vertically scaled epitaxial designs.

引用

页数：3

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