Blue Electroluminescence from Eu2+-Doped GaN@SiO2 Nanostructures Tuned to Industrial Standards

被引:28
作者
Gautam, Anurag [1 ]
van Veggel, Frank C. J. M. [1 ]
机构
[1] Univ Victoria, Dept Chem, Victoria, BC V8W 3V6, Canada
关键词
blue electroluminescence; nanoparticles; semiconductor; Eu2+ ions; LIGHT; PHOTOLUMINESCENCE; NANOPARTICLES; EFFICIENCY; RAMAN;
D O I
10.1021/cm202139u
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have tuned the blue electroluminescence of surface-modified Eu2+-doped GaN@SiO2 nanoparticle to industrial standards with a peak at 450 nm and Commission Internationale de I'Eclairage (CIE-1931) coordinates of X = 0.15 and Y = 0.15. The blue electroluminescence was observed on applying a 14 V forward bias to the devices. The Eu2+-doped GaN@SiO2 nanoparticles were obtained on nitridation of Eu3+-doped Ga2O3@SiO2 nanoparticles at 900 degrees C. Subsequently, the surface of the Eu2+-doped GaN@SiO2 nanostructure was modified by reacting with dodecyletriethoxysilane at 80 degrees C, which enabled it to be dispersible in toluene, xylene, and benzene. Tuning of the CIE coordinates is dependent on the ratio of nitrogen to oxygen in the coordinating sphere of Eu2+ ions which is the origin of the blue electroluminescence.
引用
收藏
页码:4817 / 4823
页数:7
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