Optically spin oriented electron transmission across fully epitaxial Fe3O4/GaAs(001) interfaces

被引：6
|
作者：
Taniyama, T. [1 ,2 ]
Mori, T. [1 ]
Watanabe, K. [1 ]
Wada, E. [1 ]
Itoh, M. [1 ]
Yanagihara, H. [3 ]
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2832415
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate fully epitaxial growth of Fe(3)O(4)/GaAs(001) heterostructures using a reactive molecular beam epitaxy (MBE) method. The Fe(3)O(4) film was obtained by oxidizing an ultrathin Fe layer into an Fe(3)O(4) seed layer in an O(2) atmosphere at 260 degrees C, followed by the reactive MBE growth of Fe(3)O(4). The Fe(3)O(4) seed layer effectively works as a template for the successive growth of Fe(3)O(4). Also, a clear spin filtering effect of optically spin oriented electrons at the Fe(3)O(4)/GaAs(001) interface is shown at room temperature. The results clearly demonstrate that the spin filtering effect occurs at the Fe(3)O(4)/GaAs(001) interface and has its origin in the spin split density of states of the Fe(3)O(4) layer. (C) 2008 American Institute of Physics.
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页数：3
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