Measurement technique for characterizing memory effects in RF power amplifiers

被引：291

作者：

Vuolevi, JHK ^{[1
]}

Rahkonen, T ^{[1
]}

Manninen, JPA ^{[1
]}

机构：

[1] Oulu Univ, Elect Lab, Dept Elect Engn, RIN-90014 Oulu, Finland

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 08期

关键词：

electrical memory effects; predistortion; thermal memory effects; thermal power feedback; three-tone test setup;

D O I：

10.1109/22.939917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Memory effects are defined as changes in the amplitude and phase of distortion components caused by changes in modulation frequency. These are particularly important in cancelling linearizer systems, e.g., when distortion is reduced by similar distortion in the opposite phase. This paper begins by describing electrical and electrothermal causes for memory effects. A three-tone test setup is then constructed to measure the phase of third-order intermodulation distortion products. This paper also presents the measured results for a bipolar junction transistor and a MESFET amplifier.

引用

页码：1383 / 1389

页数：7

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