Measurement technique for characterizing memory effects in RF power amplifiers

被引：291
|
作者：
Vuolevi, JHK [1 ]
Rahkonen, T [1 ]
Manninen, JPA [1 ]
机构：
[1] Oulu Univ, Elect Lab, Dept Elect Engn, RIN-90014 Oulu, Finland
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 08期
关键词：
electrical memory effects; predistortion; thermal memory effects; thermal power feedback; three-tone test setup;
D O I：
10.1109/22.939917
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Memory effects are defined as changes in the amplitude and phase of distortion components caused by changes in modulation frequency. These are particularly important in cancelling linearizer systems, e.g., when distortion is reduced by similar distortion in the opposite phase. This paper begins by describing electrical and electrothermal causes for memory effects. A three-tone test setup is then constructed to measure the phase of third-order intermodulation distortion products. This paper also presents the measured results for a bipolar junction transistor and a MESFET amplifier.
引用
收藏
页码：1383 / 1389
页数：7
相关论文
共 50 条
  • [1] Measurement technique for characterizing memory effects in RF power amplifiers
    Vuolevi, J
    Rahkonen, T
    Manninen, J
    RAWCON2000: 2000 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2000, : 195 - 198
  • [2] Different Measurement Methods for Characterizing and Detecting Memory Effects in Non-linear RF Power Amplifiers
    He, Yi
    McCarthy, Darren
    Dasilva, Marcus
    2007 70TH ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG), 2007,
  • [3] Memory effects compensation in RF power amplifiers by using envelope injection technique
    Vuolevi, J
    Manninen, J
    Rahkonen, T
    RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2001, : 257 - 260
  • [4] Quantifying memory effects in RF power amplifiers
    Ku, HC
    McKinley, MD
    Kenney, JS
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (12) : 2843 - 2849
  • [5] New Trends for the Nonlinear Measurement and Modeling of High-Power RF Transistors and Amplifiers With Memory Effects
    Roblin, Patrick
    Root, David E.
    Verspecht, Jan
    Ko, Youngseo
    Teyssier, Jean Pierre
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) : 1964 - 1978
  • [6] Measurement Technique to Assess the Impact of RF Power Amplifier Memory Effects on Radar Performance
    Tua, Carlos G.
    2012 IEEE RADAR CONFERENCE (RADAR), 2012,
  • [7] A FPGA based digital predistorter for RF power amplifiers with memory effects
    Cesari, Albert
    Gilabert, Pere L.
    Bertran, Eduard
    Montoro, Gabriel
    Dilhac, Jean M.
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 512 - +
  • [8] Behavioral modeling of nonlinear RF power amplifiers considering memory effects
    Ku, HC
    Kenney, JS
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (12) : 2495 - 2504
  • [9] Measurement technique for increasing the linearity by optimising the source impedance of RF power amplifiers
    Vuolevi, J
    Rahkonen, T
    Manninen, J
    RAWCON2000: 2000 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2000, : 227 - 230
  • [10] Memory behavioral modeling of RF power amplifiers
    Sanchez, Cesar
    de Mingo, Jesus
    Garcia, Paloma
    Luis Carro, Pedro
    Valdovinos, Antonio
    2008 IEEE 67TH VEHICULAR TECHNOLOGY CONFERENCE-SPRING, VOLS 1-7, 2008, : 1954 - 1958
12345