Molecular Beam Epitaxy growth and characterization of silicon - Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

被引：6

作者：

Srinivasan, T. ^{[1
]}

Mishra, P. ^{[1
]}

Jangir, S. K. ^{[1
]}

Raman, R. ^{[1
]}

Rao, D. V. Sridhara ^{[2
]}

Rawal, D. S. ^{[1
]}

Muralidharan, R. ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

[2] Def Met Lab, Hyderabad 500058, Andhra Pradesh, India

来源：

INFRARED PHYSICS & TECHNOLOGY | 2015年 / 70卷

关键词：

Quantum dot; Infra red detector; Molecular Beam Epitaxy; PHOTODETECTORS;

D O I：

10.1016/j.infrared.2014.12.001

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50 angstrom and 40 angstrom were compared. A 2-8 mu m band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77 K. The specific peak detectivity D* be 0.8 x 10(9) Jones for one of the detectors. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：6 / 11

页数：6

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