Molecular Beam Epitaxy growth and characterization of silicon - Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

被引：6
作者：
Srinivasan, T. [1 ]
Mishra, P. [1 ]
Jangir, S. K. [1 ]
Raman, R. [1 ]
Rao, D. V. Sridhara [2 ]
Rawal, D. S. [1 ]
Muralidharan, R. [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
[2] Def Met Lab, Hyderabad 500058, Andhra Pradesh, India
来源：
INFRARED PHYSICS & TECHNOLOGY | 2015年 / 70卷
关键词：
Quantum dot; Infra red detector; Molecular Beam Epitaxy; PHOTODETECTORS;
D O I：
10.1016/j.infrared.2014.12.001
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50 angstrom and 40 angstrom were compared. A 2-8 mu m band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77 K. The specific peak detectivity D* be 0.8 x 10(9) Jones for one of the detectors. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：6 / 11
页数：6
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