Surface morphology of sputter deposited W-Si-N composite coatings characterized by atomic force microscopy

被引:10
作者
Fu, T
Shen, YG [1 ]
Zhou, ZF
Li, KY
机构
[1] City Univ Hong Kong, Dept Mfg Engn & Engn Management, Kowloon, Hong Kong, Peoples R China
[2] Xian Jiaotong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 123卷 / 02期
关键词
tungsten; thin films; sputtering; surface morphology;
D O I
10.1016/j.mseb.2005.07.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tungsten-silicon-nitride (W-Si-N) composite coatings on Si(100) substrates were sputter deposited at various silicon target currents, and their surface morphology was studied with scaling analysis and fractal analysis based on atomic force microscopy (AFM). The root-mean-square (rms) roughness sigma, roughness exponent alpha, the correlation length xi and the average magnitude of the lateral surface slope rho to decrease with the silicon target current, which is caused by the impeding effect of amorphous Si3N4 on the grain growth of W2N and W5Si3. The competition of surface diffusion and shadowing effect together with other processes drives the formation of columnar grains with mould-like tops. The fractal dimensions obtained using power spectrum method and the R/S method are 2.16 +/- 0.04 and 2.15 +/- 0.01, respectively, and they both increase with the silicon target current. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:158 / 162
页数:5
相关论文
共 29 条
[1]  
Barabasi A.-L., 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[2]   Nanocrystalline structure and hardness of thin films [J].
Cavaleiro, A ;
Louro, C .
VACUUM, 2002, 64 (3-4) :211-218
[3]  
Feder J., 1988, Fractals. Physics of Solids and Liquids
[4]   Growth and properties of W-Si-N diffusion barriers deposited by chemical vapor deposition [J].
Fleming, JG ;
Roherty-Osmun, E ;
Smith, PM ;
Custer, JS ;
Kim, YD ;
Kacsich, T ;
Nicolet, MA ;
Galewski, CJ .
THIN SOLID FILMS, 1998, 320 (01) :10-14
[5]  
FU T, IN PRESS SURF COAT T
[6]   Effect of the counterface material on the fretting behaviour of sputtered W-Si-N coatings [J].
Gaspar, MC ;
Ramalho, A ;
Cavaleiro, A .
WEAR, 2003, 255 :276-286
[7]   Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials [J].
Gokce, OH ;
Amin, S ;
Ravindra, NM ;
Szostak, DJ ;
Paff, RJ ;
Fleming, JG ;
Galewski, CJ ;
Shallenberger, J ;
Eby, R .
THIN SOLID FILMS, 1999, 353 (1-2) :149-156
[8]   The influence of deposition parameters on the structure of Al, Zr and W coatings deposited by closed-field unbalanced magnetron sputtering [J].
Kelly, PJ ;
Arnell, RD .
SURFACE & COATINGS TECHNOLOGY, 1996, 86 (1-3) :425-431
[9]   KINETIC GROWTH WITH SURFACE RELAXATION - CONTINUUM VERSUS ATOMISTIC MODELS [J].
LAI, ZW ;
DASSARMA, S .
PHYSICAL REVIEW LETTERS, 1991, 66 (18) :2348-2351
[10]   Roughening kinetics of reactively sputter-deposited Ti-Al-N films on Si(100) [J].
Liu, ZJ ;
Shum, PW ;
Li, KY ;
Shen, YG .
PHILOSOPHICAL MAGAZINE LETTERS, 2003, 83 (10) :627-634