Continuous wave single mode operation of GaInAsSb/GaSb quantum well lasers emitting beyond 3 μm

被引：53

作者：

Lehnhardt, T. ^{[1
]}

Huemmer, M. ^{[1
]}

Roessner, K. ^{[1
]}

Mueller, M. ^{[1
]}

Hoefling, S. ^{[1
]}

Forchel, A. ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

关键词：

D O I：

10.1063/1.2926657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on room temperature continuous wave single mode GaInAsSb-GaSb quantum well lasers emitting beyond 3 mu m. Quantum well strain and composition were carefully adjusted to enhance the hole confinement without increasing electron confinement in order to avoid inhomogeneous quantum well pumping. In order to realize single mode emission as prerequisite for gas sensing applications, distributed feedback lasers were fabricated. A record single mode emission cw wavelength of 3019 nm with a side mode suppression ratio of more than 30 dB has been obtained. The room temperature peak power output per facet exceeds 3 mW. (C) 2008 American Institute Of Physics.

引用

收藏

页数：3

相关论文

共 14 条

[1] Antimonide-based lasers and DFB laser diodes in the 2-2.7 μm wavelength range for absorption spectroscopy [J].

Barat, D. ;

Angellier, J. ;

Vicet, A. ;

Rouillard, Y. ;

Le Gratiet, L. ;

Guilet, S. ;

Martinez, A. ;

Ramdane, A. .

APPLIED PHYSICS B-LASERS AND OPTICS, 2008, 90 (02) :201-204

[2]

BELENKY GL, 2004, FUTURE TRENDS MICROE, P43524

[3]

BOMSE DS, 1992, P SOC PHOTO-OPT INS, V1681, P138, DOI 10.1117/12.137730

[4] Growth and carrier dynamics in type II band alignment GaInAsSb/GaSb quantum well structure [J].

Edamura, Tadataka ;

Kan, Hiroftimi .

THIN SOLID FILMS, 2007, 515 (18) :7286-7289

[5] Room-temperature operation of 3.26 μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers -: art. no. 241104 [J].

Grau, M ;

Lin, C ;

Dier, O ;

Lauer, C ;

Amann, MC .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[6] Low threshold 2.72 μm GalnAsSb/AlGaAsSb multiple-quantum-well laser [J].

Grau, M ;

Lin, C ;

Amann, MC .

ELECTRONICS LETTERS, 2002, 38 (25) :1678-1679

[7] Continuous-wave room temperature operated 3.0 μm type IGaSb-based lasers with quinternary AlInGaAsSb barriers [J].

Hosoda, T. ;

Belenky, G. ;

Shterengas, L. ;

Kipshidze, G. ;

Kisin, M. V. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[8]

HUEMMER M, 2006, ELECTRON LETT, V42, P10

[9] Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers [J].

Kamp, M ;

Hofmann, J ;

Forchel, A ;

Schäfer, F ;

Reithmaier, JP .

APPLIED PHYSICS LETTERS, 1999, 74 (04) :483-485

[10] High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers [J].

Kim, JG ;

Shterengas, L ;

Martinelli, RU ;

Belenky, GL .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1926-1928