Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 dielectric

被引：69

作者：

Li, Ning ^{[1
]}

Harmon, Eric S. ^{[1
]}

Hyland, James ^{[1
]}

Salzman, David B. ^{[1
]}

Ma, T. P. ^{[2
]}

Xuan, Yi ^{[3
]}

Ye, P. D. ^{[3
]}

机构：

[1] Lightspin Technol Inc, Bethesda, MD 20824 USA

[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

关键词：

D O I：

10.1063/1.2908926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al(2)O(3) dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.

引用

页数：3

共 13 条

[1]

Adachi S., 1992, PHYS PROPERTIES 3 V

[2] AlSb/InAs HEMT's for low-voltage, high-speed applications [J].