Optical properties, dielectric relaxor behavior, impedance and modulus spectroscopy of 0.8BiFeO3-0.2CaTiO3 composite

被引:13
作者
Khan, Bushra [1 ]
Singh, Manoj K. [1 ]
Yadav, Preeti [1 ]
Kumar, Aditya [1 ]
Singh, Gulab [3 ]
Kumar, Pushpendra [2 ]
机构
[1] Univ Allahabad, Ctr Mat Sci, Prayagraj 211002, India
[2] Manipal Univ Jaipur, Dept Phys, Jaipur 303007, Rajasthan, India
[3] Feroze Gandhi Postgrad Coll, Dept Phys, Raebareli 229001, Uttar Pradesh, India
关键词
Multiferroic; Impedance spectroscopy; Energy band gap and magneto -dielectric; coupling; MAGNETIC-PROPERTIES; COMPLEX IMPEDANCE; CONDUCTION; CHALCOGENIDE; DEPENDENCE; CA;
D O I
10.1016/j.matchemphys.2022.126642
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
0.8BiFeO(3)-0.2CaTiO(3) (0.8BFO-0.2CTO) was synthesized by the sol-gel route. Structural characterization was performed by X-ray diffraction which confirms the rhombohedral structure. FESEM analysis reveals the irregular grains that are inhomogenous and slightly dense. Temperature-dependent dielectric permittivity shows a dielectric anomaly near the magnetic phase transition temperature (T-N) of BiFeO3 as well as relaxor-type ferroelectric properties. The PE loop confirms the presence of ferroelectricity in the sample. Frequency -dependent ac conductivity exhibits low frequency dispersion and was well explained by Jonscher power law. The obtained fitting parameters A (pre-exponential factor that indicates polarizability) and n (dimensionless frequency exponent) show maxima and minima at the transition temperature. The electrical properties were further analysed by impedance and modulus spectroscopy. According to these analysis, the relaxation time was distributed and does not follow the Debye type behaviour. Nyquist plots had been used to estimate grain and grain boundary contributions. A typical negative temperature coefficient of resistance (NTCR) behaviour was apparent due to the decrement in bulk and grain boundary resistances as the temperature increases. The temperature-dependent relaxation time revealed Arrhenius's behaviour. 0.8BFO-0.2CTO exhibits absorption and shows a transmittance of 40-44% in the visible region of spectra. The obtained value of E-g was similar to 2.26 eV, which implies the application in ultrafast optoelectronic devices. The good ability of absorption in visible region, high transmittance, the increase of extinction coefficient with wavelength, and low band gap makes 0.8BFO-0.2CTO an extraordinary material for optical devices application. The sample also shows a decrease in magneto -capacitance and increase in magneto-impedance which reflects the presence of strong magneto dielectric coupling in 0.8BFO-0.2CTO at room temperature.
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页数:11
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