Upconversion electroluminescence in InAs quantum dot light-emitting diodes

被引：34

作者：

Baumgartner, A. ^{[1
]}

Chaggar, A. ^{[1
]}

Patane, A. ^{[1
]}

Eaves, L. ^{[1
]}

Henini, M. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2885074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the low-temperature upconversion electroluminescence (UCEL) in GaAs p-i-n diodes with a layer of self-assembled InAs quantum dots (QDs) in the intrinsic region (i). Injection of carriers into the QD states at an applied bias well below the flatband condition results in near-band-edge GaAs electroluminescence, i.e., emission of photons with energies much larger than that supplied by the applied voltage and the thermal energy. We attribute the UCEL to an Auger-like recombination process and discuss its influence on carrier thermalization processes and the effect of an applied magnetic field. (C) 2008 American Institute of Physics.

引用

页数：3

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