Erbium delta-doping to InP by OMVPE

被引：0

作者：

Fujiwara, Y ^{[1
]}

Matsubara, N ^{[1
]}

Yuhara, J ^{[1
]}

Tabuchi, M ^{[1
]}

Fujita, K ^{[1
]}

Yamada, N ^{[1
]}

Nonogaki, Y ^{[1
]}

Takeda, Y ^{[1
]}

Morita, K ^{[1
]}

机构：

[1] NAGOYA UNIV,SCH ENGN,DEPT CRYSTALLINE MAT SCI,CHIKUSA KU,NAGOYA,AICHI 46401,JAPAN

来源：

COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Erbium (Er) delta-doping to InP has been successfully performed by OMVPE for the first time and characterized systematically. Rutherford backscattering (RES) measurements showed that the Er atoms located within the region of 6 nm which is the resolution limit of RES, and that the Er sheet density was directly proportional to the Er source supply time. In 4.2 K PL measurements, a characteristic Er-related emission was observed in all the Er delta-doped specimens. X-ray crystal truncation rod (CTR) scattering measurements using synchrotron radiation revealed clearly the atomic-scale Er profiles in InP and the crystalline quality of InP overgrowth.

引用

页码：149 / 154

页数：6

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