Single-event upset in highly scaled commercial silicon-on-insulator PowerPC microprocessors

被引：6
作者：
Irom, F [1 ]
Farmanesh, FH [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 05期
关键词：
cyclotron; heavy ion; microprocessors; silicon-on-insulator (SOI);
D O I：
10.1109/TNS.2005.855816
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. The results are compared with results for similar devices with bulk substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors is discussed.
引用
收藏
页码：1524 / 1529
页数：6
相关论文
共 22 条
[1]  
[Anonymous], P RADECS C DAT WORKS
[2]  
BEZERRA F, RADECS C DAT WORKS R
[3]   Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies [J].
Brothers, C ;
Pugh, R ;
Duggan, P ;
Chavez, J ;
Schepis, D ;
Yee, D ;
Wu, S .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :2134-2139
[4]  
COLINGE JP, 2001, IEEE NUCL SPAC RAD E
[5]   CMOS SCALING FOR HIGH-PERFORMANCE AND LOW-POWER - THE NEXT 10 YEARS [J].
DAVARI, B ;
DENNARD, RH ;
SHAHIDI, GG .
PROCEEDINGS OF THE IEEE, 1995, 83 (04) :595-606
[6]   SEU-sensitive volumes in bulk and SOISRAMs from first-principles calculations and experiments [J].
Dodd, PE ;
Shaneyfelt, MR ;
Horn, KM ;
Walsh, DS ;
Hash, GL ;
Hill, TA ;
Draper, BL ;
Schwank, JR ;
Sexton, FW ;
Winokur, PS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1893-1903
[7]  
ESTREME F, 1993, P IEEE RAD EFF DAT W, P13
[8]   Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation [J].
Ferlet-Cavrois, V ;
Marcandella, C ;
Giraud, G ;
Gasiot, G ;
Colladant, T ;
Musseau, O ;
Fenouillet, C ;
de Poncharra, JD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) :1456-1461
[9]   Controlling floating-body effects for 0.13μm and 0.10μm SOICMOS [J].
Fung, SKH ;
Zamdmer, N ;
Oldiges, PJ ;
Sleight, J ;
Mocuta, A ;
Sherony, M ;
Lo, SH ;
Joshi, R ;
Chuang, CT ;
Yang, I ;
Crowder, S ;
Chen, T ;
Assaderaghi, F ;
Shahidi, G .
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :231-234
[10]   Comparison of the sensitivity to heavy ions of 0.25-μm bulk and SOI technologies [J].
Gasiot, G ;
Ferlet-Cavrois, V ;
Roche, P ;
Flatresse, P ;
D'Hose, C ;
Musseau, O ;
de Poncharra, JD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (03) :1450-1455
123