Sequential 3D Process Integration: Opportunities For Low Temperature Processing

被引：6

作者：

Kerdiles, S. ^{[1
,2
]}

Acosta-Alba, P. ^{[1
,2
]}

Mathieu, B. ^{[1
,2
]}

Veillerot, M. ^{[1
,2
]}

Denis, H. ^{[1
,2
]}

Aussenac, F. ^{[1
,2
]}

Mazzamuto, F. ^{[3
]}

Toque-Tresonne, I. ^{[3
]}

Huet, K. ^{[3
]}

Samson, M-P. ^{[4
]}

Previtali, B. ^{[1
,2
]}

Brunet, L. ^{[1
,2
]}

Batude, P. ^{[1
,2
]}

Fenouillet-Beranger, C. ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA, LETI, Minatec Campus,17 Rue Martyrs, F-38054 Grenoble 9, France

[3] SCREEN LASSE, 14-38 Rue Alexandre,Bldg D, F-92230 Gennevilliers, France

[4] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France

来源：

SEMICONDUCTOR PROCESS INTEGRATION 10 | 2017年 / 80卷 / 04期

关键词：

D O I：

10.1149/08004.0215ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

3D sequential integration motivates the development of low temperature technological modules. Alternatively to classical nonselective annealing techniques, sub-microsecond laser annealing allows high temperature treatment of a sub-micrometer surface region while keeping the underneath structures at much lower temperature. In this contribution, we present recent advances in ultra-violet nanosecond laser annealing targeting monolithic 3D integration. Emphasis will be put on the demonstration of dopant activation in thin implanted SOI structures, simulating source and drain regions. Cu/ULK interconnects stability upon nanosecond laser annealing is also investigated.

引用

页码：215 / 225

页数：11

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