Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

被引：21

作者：

Mazur, Yu I. ^{[1
]}

Dorogan, V. G. ^{[1
]}

Schmidbauer, M. ^{[2
]}

Tarasov, G. G. ^{[3
]}

Johnson, S. R. ^{[4
]}

Lu, X. ^{[4
]}

Yu, S-Q ^{[5
]}

Wang, Zh M. ^{[1
]}

Tiedje, T. ^{[6
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[3] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[5] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[6] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 37期

基金：

美国国家科学基金会;

关键词：

GAAS; GAAS1-XBIX;

D O I：

10.1088/0957-4484/22/37/375703

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A Ga(AsBi) quantum well (QW) with Bi content reaching 6% and well width of 11 nm embedded in GaAs is grown by molecular beam epitaxy at low temperature and studied by means of high-resolution x-ray diffraction, photoluminescence (PL), and time-resolved PL. It is shown that for this growth regime, the QW is coherently strained to the substrate with a low dislocation density. The low temperature PL demonstrates a comparatively narrow excitonic linewidth of similar to 40 meV. For high excitation density distinct QW excited states evolve in the emission spectra. The origins of peculiar PL dependences on temperature and excitation density are interpreted in terms of intra-well optical transitions.

引用

页数：6

共 20 条

[1] Valence-band anticrossing in mismatched III-V semiconductor alloys [J].