Comparison of cadmium zinc telluride crystals grown by horizontal and vertical Bridgman and from the vapor phase

被引：23
作者：
Schieber, M [1 ]
James, RB
Hermon, H
Vilensky, A
Baydjanov, I
Goorsky, M
Lam, T
Meerson, E
Yao, HW
Erickson, J
Cross, E
Burger, A
Ndap, JO
Wright, G
Fiederle, M
机构：
[1] Sandia Natl Labs, Livermore, CA 94550 USA
[2] Hebrew Univ Jerusalem, Grad Sch Appl Sci, IL-91904 Jerusalem, Israel
[3] Univ Calif Los Angeles, Los Angeles, CA 90024 USA
[4] Real Time Radiog Readout, IL-91487 Jerusalem, Israel
[5] Univ Nebraska, Lincoln, NE USA
[6] Fisk Univ, Nashville, TN USA
[7] Univ Freiburg, D-7800 Freiburg, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 231卷 / 1-2期
关键词：
impurities; segregation; X-ray diffraction; X-ray topography; Bridgman technique; cadmium compounds; semiconducting II-IV materials;
D O I：
10.1016/S0022-0248(01)01490-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Characterization studies of Cd1-xZnxTe (0 <x <0,24) crystals, CZT, grown by high pressure vertical Bridgman (HPVB), low pressure (LPB) vertical modified Bridgman (VB), horizontal modified Bridgman (HB), and physical vapor deposition (PVD) methods were performed, For selected melt-grown ingots, the liquid/solid segregation coefficients of some of the impurities were established. For most of the crystals, the surface and the bulk crystallinity were determined using triple and double axis X-ray diffraction techniques (TAD and DAD XRD). X-ray topography maps were also used to study macroscopic defects, The difference in properties of CZT grown by these methods are discussed. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码：235 / 241
页数：7
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