Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

被引：453

作者：

Mueller, J. ^{[1
]}

Boescke, T. S.

Braeuhaus, D. ^{[2
]}

Schroeder, U. ^{[3
]}

Boettger, U. ^{[2
]}

Sundqvist, J. ^{[1
]}

Kuecher, P. ^{[1
]}

Mikolajick, T. ^{[3
,4
]}

Frey, L. ^{[5
]}

机构：

[1] Fraunhofer Ctr Nanoelect Technol CNT, D-01099 Dresden, Germany

[2] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52074 Aachen, Germany

[3] Namlab gGmbH, D-01187 Dresden, Germany

[4] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

[5] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期

关键词：

CAPACITORS;

D O I：

10.1063/1.3636417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remnant polarization of 16 mu C/cm(2) and a high coercive field of 1 MV/cm were observed. Further proof for the ferroelectric nature was collected by quasi-static polarization-voltage hysteresis, small signal capacitance-voltage, and piezoelectric measurements. Data retention characteristics were evaluated by a Positive Up Negative Down pulse technique. No significant decay of the initial polarization state was observed within a measurement range of up to two days. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3636417]

引用

页数：3

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