High-performance planar nanoscale dielectric capacitors

被引:17
作者
Ozcelik, V. Ongun [1 ,2 ]
Ciraci, S. [3 ]
机构
[1] Bilkent Univ, UNAM, Natl Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
[2] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
[3] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey
来源
PHYSICAL REVIEW B | 2015年 / 91卷 / 19期
关键词
BORON-NITRIDE; ELECTRIC-FIELD; GRAPHENE; LAYERS; SUPERCAPACITORS; NANORIBBONS;
D O I
10.1103/PhysRevB.91.195445
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a model for planar nanoscale dielectric capacitors consisting of a single layer, insulating hexagonal boron nitride (BN) stripe placed between two metallic graphene stripes, all forming commensurately a single atomic plane. First-principles density functional calculations on these nanoscale capacitors for different levels of charging and different widths of graphene-BN stripes mark high gravimetric capacitance values, which are comparable to those of supercapacitors made from other carbon-based materials. Present nanocapacitor models allow the fabrication of series, parallel, and mixed combinations which offer potential applications in two-dimensional flexible nanoelectronics, energy storage, and heat-pressure sensing systems.
引用
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页数:5
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