Enhanced low-field magnetoresistance in La0.67Sr0.33MnO3:MgO composite films

被引：36

作者：

Staruch, M. ^{[1
]}

Hires, D. ^{[2
]}

Chen, A. ^{[3
]}

Bi, Z. ^{[3
]}

Wang, H. ^{[3
]}

Jain, M. ^{[1
,4
]}

机构：

[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA

[2] Univ Connecticut, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA

[3] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

[4] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 11期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; MAGNETOTRANSPORT PROPERTIES; GIANT MAGNETORESISTANCE; ELECTRICAL-TRANSPORT; MANGANITE FILMS; POLYCRYSTALLINE; LA0.67CA0.33MNO3; LA1-XSRXMNO3; PEROVSKITE; INTERFACES;

D O I：

10.1063/1.3665881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report low-field magnetoresistance observed in preferentially c-axis oriented La0.67Sr0.33MnO3:MgO composite films fabricated on (001) LaAlO3 substrates using a hybrid solution route. Addition of MgO in the composite film results in lowering of Curie temperature (similar to 300 K) from that of the pure film (similar to 360K). The resistivity increases and temperature of highest resistivity of the composite films decrease with the addition of MgO. This behavior is attributed to a small substitution of Mg2+ in the manganite lattice and the presence of MgO near the manganite grain boundaries, thus building tunneling barriers and enhancing the spin polarized tunneling in the composite films. The values of low-field magnetoresistance increase with MgO addition and the composite film with highest amount of MgO exhibits maximum MR of -33% at 0.5 T (5000 Oe) and 10 K. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665881]

引用

页数：5

共 29 条

[1] Transport mechanism and magnetothermoelectric power of electron-doped manganites La0.85Te0.15Mn1-xCuxO3 (0≤x≤0.20) [J].